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LM1101N5 PCA9518D KT831W51 AN26130A 10700 CT2566 KD1128 2A222
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  Datasheet File OCR Text:
 TO-92 Plastic-Encapsulate Transistors
2N3906 TRANSISTOR (PNP)
FEATURE PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -0.2 0.625 150 -55-150 Units V V V A W
TO-92
1.EMITTER
2.BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Collector cut-off Emitter cut-off current current current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE1 DC current gain hFE2 hFE3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) fT td tr ts tf Test conditions MIN -40 -40 -5 -0.1 -50 -0.1 100 60 30 -0.4 -0.95 250 35 35 225 75 V V MHz ns ns ns ns 400 TYP MAX UNIT V V V A nA A
IC = -10A, IE=0 IC =-1mA , IB=0 IE= -10A, IC=0 VCB= -40 V,IE=0 VCE= -30 V,VBE(off)=-3V VEB= -5 V , VCE=-1 V, VCE=-1 V, VCE=-1 V, IC=0 IC= -10mA IC= -50mA IC= -100mA
IC= -50mA, IB= -5mA IC= -50mA, IB= -5mA VCE=-20V, IC= -10mA f = 100MHz VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA VCC=-3V,Ic=-10mA IB1=IB2=-1mA
CLASSIFICATION OF hFE1
Rank Range O 100-200 Y 200-300 G 300-400
Typical Characteristics
2N3906


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